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| 2SK741 Silicon N-Channel MOS FET Application TO-220AB High speed power switching Features * * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver 2 1 2 3 1 1. Gate 2. Drain (Flange) 3. Source 3 Table 1 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse)* IDR Pch** Tch Tstg Ratings 250 20 7 28 7 50 150 -55 to +150 Unit V V A A A W C C -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- * PW 10 s, duty cycle 1 % ** Value at TC = 25 C 2SK741 Table 2 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time * Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 250 Typ -- Max -- Unit V Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 16 V, VDS = 0 VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V * ID = 4 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 20 -- -- V -------------------------------------------------------------------------------------- -- -- 2.0 -- -- -- -- 0.40 10 250 4.0 0.55 A A V -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- 2.7 -- -- -- -- -- -- -- -- 4.5 820 370 115 12 48 70 50 1.2 -- -- -- -- -- -- -- -- -- S pF pF pF ns ns ns ns V IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF/dt = 50 A/s ID = 4 A, VGS = 10 V, RL = 7.5 -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- ---------------------------------------------------------------- -------------------------------------------------------------------------------------- -------------------------------------------------------------------------------------- -- 400 -- ns -------------------------------------------------------------------------------------- 2SK741 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 100 Maximum Safe Operation Area 40 20 s 0 PW s 10 D C =1 op 0 er m at s ( io n 1S (T ho C 1.0 = t) 25 C Operation in this area is ) limited by RDS (on) Drain Current ID (A) 10 10 1 m s Ta = 25C 0.1 0 50 100 Case Temperature TC (C) 150 1 100 10 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 15 V 8 Drain Current ID (A) 8V 6V 5.5 V Pulse Test 5V 4 4.5 V VGS = 4 V 0 4 8 12 16 Drain to Source Voltage VDS (V) 20 0 Drain Current ID (A) 8 10 Typical Transfer Characteristics VDS = 10 V Pulse Test 6 6 4 -25C 75C TC = 25C 2 2 2 4 6 8 10 Gate to Source Voltage VGS (V) 2SK741 Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Drain to Source Saturation Voltage VDS (on) (V) PulseTest Static Drain to Source on State Resistance RDS (on) () 5 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 2 1.0 0.5 VGS = 10 V 15 V 0.2 0.1 0.05 0.5 8 6 ID = 10 A 4 2 5A 2A 0 4 8 12 16 Gate to Source Voltage VGS (V) 20 1.0 2 5 10 20 Drain Current ID (A) 50 Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) () VGS = 10 V Pulse Test 0.8 Forward Transfer Admittance yfs (S) 1.0 10 A 5A 0.6 ID = 2 A 50 Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test 20 10 5 -25C Ta = 25C 75C 0.4 2 1.0 0.5 0.2 0.2 0 -40 0 40 80 120 Case Temperature TC (C) 160 0.5 1.0 2 5 Drain Current ID (A) 10 20 2SK741 Body to Drain Diode Reverse Recovery Time 5,000 Reverse Recovery Time trr (ns) di/dt = 50 A/s, Ta = 25C VGS = 0 Pulse Test 10,000 Typical Capacitance vs.Drain to Source Voltage VGS = 0 f = 1 MHz Capacitance C (pF) 2,000 1,000 500 1,000 Ciss Coss 100 200 100 50 0.5 Crss 10 1.0 2 5 10 20 Reverse Drain Current IDR (A) 50 0 10 20 30 40 Drain to Source Voltage VDS (V) 50 Dynamic Input Characteristics 500 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) 500 Switching Characteristics VGS = 10 V PW = 2s, duty < 1 % td (off) tf tr 20 td (on) 10 5 0.2 300 VDS 100 V 50 V VGS Switching Time t (ns) 400 VDD = 200 V 16 200 100 50 12 200 8 100 VDD = 200 V 100 V 50 V 8 ID = 7 A 4 0 16 24 32 Gate Charge Qg (nc) 0 40 0.5 1.0 2 5 10 Drain Current ID (A) 20 2SK741 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 4 2 5 V, 10 V VGS = 0, -5 V 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance S (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 0.5 0.3 0.1 0.2 0.1 TC = 25C 1.0 0.05 0.02 tP 1 0.0 Sho 1 0.03 0.01 10 uls e ch-c (t) = S (t) * ch-c ch-c = 2.5C/W, TC = 25C PDM D = PW T PW T 1m 10 m Pulse Width PW (s) 100 m 1 10 100 2SK741 Switching Time Test Circuit Vin Monitor Wavewforms 90 % Vout Monitor D.U.T RL Vin Vout 10 % 10 % 90 % tr 90 % td (off) 10 % 50 Vin = 10 V . VDD = 30 V . td (on) tf |
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